Stimulated Raman backscattering of laser radiation in deep plasma channels

Stimulated Raman backscattering (RBS) of intense laser radiation confined by a single-mode plasma channel with a radial variation of plasma frequency greater than a homogeneous-plasma RBS bandwidth is characterized by a strong transverse localization of resonantly-driven electron plasma waves (EPW). The EPW localization reduces the peak growth rate of RBS and increases the amplification bandwidth. The continuum of non-bound modes of backscattered radiation shrinks the transverse field profile in a channel and increases the RBS growth rate. Solution of the initial-value problem shows that an electromagnetic pulse amplified by the RBS in the single-mode deep plasma channel has a group velocity higher than in the case of homogeneous-plasma Raman amplification. Implications to the design of an RBS pulse compressor in a plasma channel are discussed.Comment: 11 pages, 3 figures; submitted to Physics of Plasma

Nonlocal Cooper pair Splitting in a pSn Junction

Perfect Cooper pair splitting is proposed, based on crossed Andreev reflection (CAR) in a p-type semiconductor - superconductor - n-type semiconductor (pSn) junction. The ideal splitting is caused by the energy filtering that is enforced by the bandstructure of the electrodes. The pSn junction is modeled by the Bogoliubov-de Gennes equations and an extension of the Blonder-Tinkham-Klapwijk theory beyond the Andreev approximation. Despite a large momentum mismatch, the CAR current is predicted to be large. The proposed straightforward experimental design and the 100% degree of pureness of the nonlocal current open the way to pSn structures as high quality sources of entanglement

Thermal rectification of electrons in hybrid normal metal-superconductor nanojunctions

We theoretically investigate heat transport in hybrid normal metal-superconductor (NS) nanojunctions focusing on the effect of thermal rectification. We show that the heat diode effect in the junction strongly depends on the transmissivity and the nature of the NS contact. Thermal rectification efficiency can reach up to 123% for a fully-transmissive ballistic junction and up to 84% in diffusive NS contacts. Both values exceed the rectification efficiency of a NIS tunnel junction (I stands for an insulator) by a factor close to 5 and 3, respectively. Furthermore, we show that for NS point-contacts with low transmissivity, inversion of the heat diode effect can take place. Our results could prove useful for tailoring heat management at the nanoscale, and for mastering thermal flux propagation in low-temperature caloritronic nanocircuitry.Comment: 4+ pages, 3 color figure

Estimation of the particle-antiparticle correlation effect for pion production in heavy ion collisions

Estimation of the back-to-back pi-pi correlations arising due to evolution of the pionic field in the course of pion production process is given for central heavy nucleus collisions at moderate energies.Comment: 6 LaTeX pages + 5 ps figure